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Determination of band offsets in heterostructured colloidal nanorods using scanning tunneling spectroscopy

机译:扫描隧道光谱法测定异质结构胶体纳米棒中的能带偏移

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The ability to tailor the properties of semiconductor nanocrystals through creating core/shell heterostructures is the cornerstone for their diverse application in nanotechnology. The band-offsets between the heterostructure components are determining parameters for their optoelectronic properties, dictating for example the degree of charge-carrier separation and localization. So far, however, no method was reported for direct measurement of these factors in colloidal nanocrystals and only indirect information could be derived from optical measurements. Here we demonstrate that scanning tunneling spectroscopy along with theoretical modeling can be used to determine band-offsets in such nanostructures. Applying this approach to CdSe/CdS quantum-dotanorod core/shell nanocrystals portrays its type I band structure where both the hole and electron ground state are localized in the CdSe core, in contrast to previous reports which predicted electron delocalization. The generality of the approach is further demonstrated in ZnSe/CdS nanocrystals where their type II band alignment, leading to electron-hole separation, is manifested.
机译:通过创建核/壳异质结构来定制半导体纳米晶体特性的能力是其在纳米技术中的多种应用的基石。异质结构组件之间的带隙是确定其光电特性的参数,例如决定了载流子分离和定位的程度。然而,到目前为止,还没有报道直接测量胶态纳米晶体中这些因素的方法,并且只能从光学测量中获得间接信息。在这里,我们证明扫描隧道光谱法和理论模型可以用来确定这种纳米结构中的带偏移。将这种方法应用于CdSe / CdS量子点/纳诺德核/壳纳米晶体可描绘其I型能带结构,其中空穴和电子基态均位于CdSe核中,这与以前的预测电子离域的报道形成了对比。该方法的普遍性在ZnSe / CdS纳米晶体中得到了进一步证明,其中显示了导致电子-空穴分离的II型能带排列。

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