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Transient Terahertz Conductivity of GaAs Nanowires

机译:GaAs纳米线的瞬变太赫兹电导率

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摘要

The time-resolved conductivity of isolated GaAs nanowires is investigated by optical-pump terahertz-probe time-domain spectroscopy. The electronic response exhibits a pronounced surface plasmon mode that forms within 300 fs before decaying within 10 ps as a result of charge trapping at the nanowire surface. The mobility is extracted using the Drude model for a plasmon and found to be remarkably high, being roughly one-third of that typical for bulk GaAs at room temperature.
机译:通过光泵太赫兹探针时域光谱研究了隔离的GaAs纳米线的时间分辨电导率。电子响应表现出明显的表面等离振子模式,该模式在300 fs内形成,然后由于电荷在纳米线表面的陷获而在10 ps内衰减。使用Drude模型对等离激元提取了迁移率,发现迁移率非常高,约为室温下GaAs体积典型迁移率的三分之一。

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