Beijing Key Laboratory for Terahertz Spectroscopy and Imaging, Key Laboratory of Terahertz Optoelectronics, Ministry of Education, Department of Physics, Capital Normal University, Beijing 100048 China;
Beijing Key Laboratory for Terahertz Spectroscopy and Imaging, Key Laboratory of Terahertz Optoelectronics, Ministry of Education, Department of Physics, Capital Normal University, Beijing 100048 China;
Beijing Key Laboratory for Terahertz Spectroscopy and Imaging, Key Laboratory of Terahertz Optoelectronics, Ministry of Education, Department of Physics, Capital Normal University, Beijing 100048 China;
Surface photoconductivity; Ultrafast carrier dynamics; Terahertz.;
机译:太赫兹泵浦发射光谱研究GaAs发射极的瞬态表面光电导
机译:太赫兹泵浦发射光谱研究GaAs发射极的瞬态表面光电导
机译:瞬变太赫兹时域光谱研究光激发的GaAs表面
机译:低温生长的GaAs太赫兹光电导天线发射器和探测器掺杂缓冲液的影响
机译:太赫兹光谱研究了界面电子转移和瞬态光电导性。
机译:瞬态圆二色吸收光谱法研究室温下本征GaAs量子阱中空穴的自旋弛豫动力学
机译:半绝缘GaAs和INP光电导光器弓扎天线结构的特点
机译:分子束外延太赫兹雷达应用生长的低温Gaas的瞬态光电导率。