A compact model for the ballistic subthreshold current in ultra-thin independent double-gate MOSFETs

摘要

We present an analytical model for the subthreshold characteristic of ultra-thin independent double-gate (IDG) MOSFETs working in the ballistic regime. This model takes into account short-channel effects, quantisation effects and source-to-drain tunnelling (Wentzel-Kramers-Brillouin (WKB) approximation) in the expression of the subthreshold drain current. Important device parameters, such as off-state current or subthreshold swing, can be easily evaluated through this full analytical approach. The model can be successfully implemented in a Technologies Computer-Aided Design (TCAD) circuit simulator for the simulation of IDG MOSFET-based circuits.