DIRECT EXTRACTION TECHNIQUE OF p-TOPOLOGY SMALL-SIGNAL EQUIVALENT CIRCUIT MODEL FOR Si/SiGe HETEROJUNCTION BIPOLAR TRANSISTOR

摘要

A developed direct extraction technique of small-signal p-topology Small signal equivalent circuit model for Si/SiGe heterojunction bipolar transistor is presented. The intrinsic model parameters are analytically extracted. The extraction procedure is performed using new set of exact equations that do not need numerical fitting, special polarization of the device or any kind of post processing. Flat frequency response of the extracted parameters is obtained. Excellent agreement is noticed between S-parameters measurements and its simulated counterpart using the extracted model in the frequency range from 40 MHz to 20 GHz at different bias conditions.