SOS JUNCTIONLESS MOSFETS VS. INVERSION CHANNEL MOSFETS: DOUBLING THE DEVICE SPEED WITHOUT CHANGING THE TECHNOLOGY

摘要

This letter compares experimentally the performance of the SOS junctionless MOSFET and the conventional SOS inversion channel MOSFET, fabricated in a production line technology. It was shown that the former has a significantly higher cutoff frequency f_T, and therefore presents a viable alternative to a conventional SOS MOSFETs for high-speed integrated circuits.