Drain breakdown voltage: A comparison between junctionless and inversion mode p-channel MOSFETs

摘要

A comparative study of the drain breakdown phenomena in junctionless (JL) and inversion mode (IM) p-channel MOSFETs has been investigated experimentally with different V_(Gs), channel widths, and V_(SUB)·In order to explain the dependence of drain breakdown voltages (BV_(DS)) on V_(GS), 3～D device simulation has been also performed. When the device is turned ON, the BV_(DS) is larger in JL than IM transistors. The BV_(DS) is decreased with the increase of |V_(GS)| in IM transistors but it is increased in JL transistors. When the device is turned OFF, the BV_(DS) is larger in IM than JL transistors. The BV_(DS) is decreased with the increase of channel width for JL and IM transistors. The BV_(DS) is decreased in IM transistor when the back surface state of Si film is changed from the accumulation to the inversion but it is almost constant in JL transistors.