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Void-free trench isolation based on a new trench design

机译:基于新型沟槽设计的无空隙沟槽隔离

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摘要

In this paper, in order to avoid the voids during deep trench isolation, an inverted trapezium shaped trench is proposed which is beneficial to polysilicon refill since the top opening size is larger than that of the bottom. An optimized micromachining process is used and an inverted trapezium shaped trench is achieved by isotropic etching. On the other hand, for the filling effect, the completely smooth transition curve type trench is better than the trench with sharp corners. Compared with the linear trench, the completely smooth transition curve type trench can improve the strength of mechanical connection. Through combining the novel trench design with the optimization of trench design, a deep trench without voids can be guaranteed. A void-free deep isolation trench is finally realized which enables the electrical isolation between two movable microstructures or between a movable and a fixed microstructure.
机译:在本文中,为了避免在深沟槽隔离期间产生空隙,提出了一种倒梯形沟槽,由于顶部开口的尺寸大于底部开口的尺寸,因此有利于多晶硅的填充。使用优化的微加工工艺,并通过各向同性蚀刻获得倒梯形沟槽。另一方面,对于填充效果,完全平滑的过渡曲线型沟槽比具有尖角的沟槽更好。与线性沟槽相比,完全平滑的过渡曲线型沟槽可以提高机械连接的强度。通过将新颖的沟槽设计与优化的沟槽设计相结合,可以确保没有空隙的深沟槽。最终实现了无空隙的深隔离沟槽,该沟槽能够实现两个可移动微结构之间或可移动和固定微结构之间的电隔离。

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