Oxide interfacial charge engineering towards normally-off AlN/GaN MOSHEMT

摘要

In this paper a detail insight into the role of oxide/barrier interfacial charges (No) for shifting the threshold voltage (V-T) of AlN/GaN metal oxide semiconductor high electron mobility transistors (MOSHEMTs) is gained. A model is developed for VT considering all possible charges arise at different interfaces. To validate the model the proposed device is simulated by considering different insulators and No, into account. It is very fascinating to observe that VT is highly sensitive towards change in No, at higher oxide dimensions, whereas at lower dimensions No, has very negligible effect. Normally-off operation can be achieved by increasing or decreasing No, in MOSHEMT with Al2O3 or HfO2 as gate dielectric respectively. (C) 2016 Elsevier Ltd. All rights reserved.