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Effect of cadmium sulfide thickness on electron beam-deposited titania/cadmium sulfide nanocomposite films

机译:硫化镉厚度对电子束沉积二氧化钛/硫化镉纳米复合薄膜的影响

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摘要

Improving the photo-catalytic response of TiO_2 semiconductor nanocomposites to visible light is the key issue. Heterogeneous TiO_2/CdS nanocomposite films (NCFs) are successfully deposited on the p-type [110] silicon substrate using an electron beam deposition (EBD) method. We report for the first time CdS thickness dependent photocurrent response of such NCFs. Effects of varying CdS thicknesses (50-150 nm) on the structural, optical and electrical properties are examined. The lattice parameters and nanocrystallinity of these NCFs obtained from XRD measurement show gradual increment with increase of CdS thickness and preferably grow along (101), (112) and (200) directions for various CdS thicknesses. The calculated value of mean lattice parameters and volume is a=0.371 nm, c=0.945 nm and V=13.73 nm~3 respectively. The estimated average crystallite sizes for TiO_2 and TiO_2/CdS NCFs at various CdS thicknesses are 12.3, 24.9, 39.59 and 42.4 nm. Interestingly, the FES EM images reveal clusters-like growth pattern attributed to the mechanism of particles agglomeration towards free energy minimization. The UV-vis reflectance in the range of 350 to 700 nm decreases due to the introduction of CdS in the NCF due to increased visible absorption. The TiO_2/Si and CdS/Ti02/Si heterojunction exhibits a rectifying behavior with considerably high photocurrent contrast and fast responses to visible light due to enhanced light absorption. The dark current increases significantly with increasing CdS thickness due to increase in grain size. Our results suggest that the structural and optoelectronic properties of TiO_2 films can significantly be improved by varying the thicknesses of CdS film useful for nanophotonics.
机译:改善TiO_2半导体纳米复合材料对可见光的光催化响应是关键问题。使用电子束沉积(EBD)方法将异质TiO_2 / CdS纳米复合膜(NCF)成功沉积在p型[110]硅基板上。我们首次报告了此类NCF的CdS厚度依赖性光电流响应。研究了变化的CdS厚度(50-150 nm)对结构,光学和电学性质的影响。通过XRD测量获得的这些NCF的晶格参数和纳米结晶度随着CdS厚度的增加而逐渐增加,并且优选沿着(101),(112)和(200)方向生长,具有各种CdS厚度。平均晶格参数和体积的计算值分别为a = 0.371 nm,c = 0.945 nm和V = 13.73 nm〜3。在各种CdS厚度下,TiO_2和TiO_2 / CdS NCF的估计平均微晶尺寸为12.3、24.9、39.59和42.4 nm。有趣的是,FES EM图像揭示了簇状增长模式,这归因于粒子向自由能最小化的聚集机制。由于可见光吸收增加,NCF中引入了CdS,因此350-700 nm范围内的UV-vis反射率降低。 TiO_2 / Si和CdS / TiO2 / Si异质结显示出整流行为,具有较高的光电流对比度,并且由于增强了光吸收而对可见光具有快速响应。由于晶粒尺寸的增加,暗电流随着CdS厚度的增加而显着增加。我们的结果表明,通过改变用于纳米光子学的CdS膜的厚度,可以显着改善TiO_2膜的结构和光电性能。

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