The paper deals with physical simulation of the growth of silicon single crystals of large diameter by the Czochralski method in a horizontal magnetic field (HMF). InGaSn eu-tectic with the real growth criteria, i.e., Prandtl, Reynolds, Grashof, Hartmann numbers, etc. is used in the simulation. The radiation heat removal from the melt free surface is considered, too. A multi-channel measuring system is used for experimental data sampling and processing. Primary attention in the work is given to the study of heat transfer, in particular, the instability of the "cold melt" zone at the crystallization front exposed to a horizontal magnetic field.
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