Manufacture of low-oxygen concentrated silicon single crystal for silicon semiconductor, involves subjecting raw material silicon to silicon single crystal drawing by horizontal magnetic field type Czochralski method

摘要

A raw material silicon melt solution (5) is subjected to silicon single crystal drawing by horizontal magnetic field type Czochralski method. The internal diameter (D) of the quartz crucible (6) in which the silicon melt solution is filled, is extruded 2.5-3 times the diameter (d) of silicon crystal. The silicon single crystal (4) is extruded by rotating the crystal in rotational speed of crystal which is in opposite direction of the rotational speed of quartz crystal which is more than 0 to 0.5 rpm. Thus, the low-oxygen concentrated silicon single crystal is manufactured. A raw material silicon melt solution is subjected to silicon single crystal drawing by horizontal magnetic field type Czochralski method. The internal diameter (D) of the quartz crucible in which the silicon melt solution is filled, is extruded 2.5-3 times the diameter (d) of silicon crystal. The silicon single crystal is extruded by rotating the crystal in rotational speed of crystal which is in opposite direction of the rotational speed of quartz crystal which is more than 0 to 0.5 rpm. Thus, the low-oxygen concentrated silicon single crystal is manufactured. The rotational speed of the silicon single crystal is 5-60h/((pi ).d), where h is the depth of raw material solution.