THE CONTROL OF OXYGEN IN CZOCHRALSKI SILICON SINGLE CRYSTAL WITH APPLIED MAGNETIC FIELD

摘要

With an applied field, we can retard the convective flow effectively and controlling the oxygen content in the melt and stabilizes the melt surface during the growth of Czochralski silicon single crystal. It would reduce the oxygen concentrations in the crystal. We calculated the distribution of magnetic field and the effect of the magnetic field on the motion of melt by finite element method.