Pulling up a silicon single crystal by Magnetic field applied Czochralski method comprises increasing and decreasing neck diameter to grow the neck, and controlling neck diameter variation rate within predetermined range

摘要

Pulling up a silicon single crystal (4) comprises bringing seed crystal (1) into contact with material silicon melt (5), pulling up the seed crystal, growing a neck (2), and increasing a diameter to grow a single crystal with predetermined crystal diameter. The neck diameter is increased and decreased to grow the neck, during which a neck diameter variation rate is 0.05-0.5, assuming that a quotient of a neck diameter difference between adjoining inflection points of the increasing and decreased neck diameter over a neck length between the inflection points is the neck diameter variation rate.