Czochralski production of heavy silicon single crystals, for making large diameter silicon wafers, uses a relatively low maximum cusp magnetic field intensity at the crucible inner wall

摘要

Czochralski silicon single crystal production comprises the use of a large diameter crucible (3) and a relatively low maximum cusp magnetic field intensity at the crucible inner wall. Silicon single crystal production by the Czochralski method comprises using a crucible of greater than 0.7 m inside diameter and employing a cusp magnetic field having a maximum intensity of less than 1000 G at the crucible inner wall.