首页> 外国专利> Preparation of seed crystal from semiconductor material, contains slip zones used for drawing single crystals by Czochralski method or by zone drawing where crystal block is silicon rod of specific diameter

Preparation of seed crystal from semiconductor material, contains slip zones used for drawing single crystals by Czochralski method or by zone drawing where crystal block is silicon rod of specific diameter

机译:用半导体材料制备籽晶,包含滑移区,该滑移区用于通过切克劳斯基法拉晶单晶或通过区域拉晶(其中晶体块为特定直径的硅棒)制成

摘要

The preparation of a seed crystal involves: (a) preparation of a cylindrical crystal block, from a semiconductor material, containing slip zones (sic, Gleitungen) in the direction; (b) separation of a crystal piece (sic) involving the slip zones from the crystal block; (c) drilling or sawing out of the unfinished product from separated crystal piece; and (d) forming of the unfinished product. Independent claims are also included for the following: (1) a seed crystal obtained as above; and (2) a process for drawing a single crystal by the Czochralski method or by zone drawing using a seed crystal having slip zones.
机译:种晶的制备涉及:(a)用半导体材料制备在方向上包含滑移区(sic,Gleitungen)的圆柱形晶体块; (b)将包含滑移区的一块晶体从晶体块中分离出来; (c)从分离的晶体片中钻出或锯出未加工的产品; (d)形成未完成的产品。还包括以下方面的独立权利要求:(1)如上所述获得的籽晶; (2)通过切克劳斯基方法或使用具有滑移区的籽晶进行区域拉伸来拉伸单晶的方法。

著录项

  • 公开/公告号DE102006016325A1

    专利类型

  • 公开/公告日2006-08-24

    原文格式PDF

  • 申请/专利权人 SILTRONIC AG;

    申请/专利号DE20061016325

  • 发明设计人 KNERER DIETER;

    申请日2006-04-06

  • 分类号C30B15/36;C30B13/34;

  • 国家 DE

  • 入库时间 2022-08-21 21:20:08

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