Producing silicon single crystal after zone-melting process, comprises melting bulk material in melting zone at lower end of melting rod, and contacting the melting zone with seed crystal, so that single crystal grows on the seed crystal

摘要

The method comprises melting a bulk material in a melting zone at a lower end of a melting rod (1), and contacting the melting zone with a seed crystal (4), so that a single crystal grows on the seed crystal under receiving the crystal structure of the seed crystal. The melting rod has a channel (2) running in its longitudinal axis. The channel ends at the beginning of the melting yet above the lower end of the melting rod and has a base. The base is removed by progressive melting of the rod. The bulk material in the melting zone is brought over the channel opened by removing the base. The method comprises melting a bulk material in a melting zone at a lower end of a melting rod (1), and contacting the melting zone with a seed crystal (4), so that a single crystal grows on the seed crystal under receiving the crystal structure of the seed crystal. The melting rod has a channel (2) running in its longitudinal axis. The channel ends at the beginning of the melting yet above the lower end of the melting rod and has a base. The base is removed by progressive melting of the melting rod. The bulk material in the melting zone is brought over the channel opened by removing the base. The melting rod and/or the bulk material are melted by an induction heating. The bulk material is kept in a container, which is coupled with the upper end of the melting rod. Independent claims are included for: (1) a melting rod useful in a zone-melting process for producing a single-crystal; and (2) a device for producing a silicon single crystal after a zone-melting process.