首页> 外文期刊>Journal of Crystal Growth >Growth of β_II-Li_3VO_4 single crystals by the heater-in-zone zone-melting method using a traveling solvent of LiVO_3
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Growth of β_II-Li_3VO_4 single crystals by the heater-in-zone zone-melting method using a traveling solvent of LiVO_3

机译:使用LiVO_3的行进溶剂通过区域加热区熔融法生长β_II-Li_3VO_4单晶

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摘要

Low-form (β_II-) Li_3 VO_4 single crystals have successfully been grown by the heater-in-zone zone-melting method using a traveling solvent of LiVO_3. The as-grown crystals are transparent and have no cracks or bubble inclusions. To prevent the crystals from cracking. the temperature of the heater is set to below 700℃. The growth rate must be less than 0. 25mm/h and the crystal rotation rate more than 30 rpm in order to eliminate bubble formation. The formation of low-angle grain boundaries is effectively suppressed by growing the crystals along the [0 0 1] direction. The emission of green light from the as-grown β_II-Li_3 VO_4 single crystal is observed by irradiation with a Nd : YAG laser.
机译:低级(β_II-)Li_3 VO_4单晶已通过使用LiVO_3的行进溶剂通过区域加热区熔化法成功生长。所生长的晶体是透明的,没有裂纹或气泡夹杂物。为了防止晶体破裂。加热器温度设定在700℃以下。为了消除气泡形成,生长速率必须小于0. 25mm / h,晶体旋转速率必须大于30 rpm。通过沿[0 0 1]方向生长晶体可以有效地抑制低角度晶界的形成。通过用Nd:YAG激光照射观察到从生长的β_II-Li_3VO_4单晶发出的绿光。

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