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首页> 外文期刊>Ferroelectrics: Letters Section >A New Method for Electrical Characterization of Ferroelectric Thin Films at Microwave Frequencies
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A New Method for Electrical Characterization of Ferroelectric Thin Films at Microwave Frequencies

机译:微波频率下铁电薄膜电学表征的新方法

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摘要

In this work, varactor shunt switches (VSS) are utilized as test structures for characterization of ferroelectric thin films. The varactor shunt switch consists of coplanar waveguide input and output feed lines, and a shunt parallel plate varactor. The simplicity of the device structure and the ease of modeling the device allow one to match the experimental scattering parameters (S parameters) to the modeled results, and hence characterize the dielectric properties of the ferroelectric thin-film accurately. This paper illustrates the precise characterization of the ferroelectric thin-films using the VSS as a test structure.
机译:在这项工作中,变容并联开关(VSS)被用作表征铁电薄膜特性的测试结构。变容二极管并联开关由共面波导输入和输出馈线和并联并联平板变容二极管组成。器件结构的简单性和器件建模的简便性使得人们可以将实验散射参数(S参数)与建模结果进行匹配,从而准确地表征铁电薄膜的介电特性。本文说明了使用VSS作为测试结构的铁电薄膜的精确表征。

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