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首页> 外文期刊>Ferroelectrics: Letters Section >Investigation of Switching Behaviour in PbZr_(0.55)Ti_(0.45)O_3 Thin Films by Means of Scanning Probe Microscopy
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Investigation of Switching Behaviour in PbZr_(0.55)Ti_(0.45)O_3 Thin Films by Means of Scanning Probe Microscopy

机译:扫描探针显微镜研究PbZr_(0.55)Ti_(0.45)O_3薄膜的开关行为

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摘要

Polarization switching processes in polycrystalline PbZr_(0.55)Ti_(0.45)O_3 thin films were investigated using piezoresponse mode of Scanning Probe Microscopy. Analysis of a piezoresponse signal reveals self-polarization of as-grown film caused by internal bias field. The written domains with polarization oriented opposite to self-polarization direction are unstable and switched back with time. The dynamics of backswitching process strongly depends on the films microstructure and is slower in the regions with higher density of grain boundaries.
机译:利用扫描探针显微镜的压电响应模式研究了多晶PbZr_(0.55)Ti_(0.45)O_3薄膜中的偏振转换过程。对压电响应信号的分析显示,由于内部偏置场引起的成膜薄膜的自极化。极化方向与自极化方向相反的写入域是不稳定的,并且会随时间切换回去。反向切换过程的动力学很大程度上取决于薄膜的微观结构,而在具有较高晶界密度的区域则较慢。

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