The Role of Nitrogen-Containing Compounds in the Growth of Oxide Layers on GaAs and InP in the Course of Their Thermal Oxidation

摘要

Thermal oxidation of GaAs and InP with the participation of nitrogen-containing compounds (such as NH_3,N_2O,NH_4NO_3,NH_4VO_3,and NH_3 + V_2O_5) is investigated.It is found that the rates of growth of oxide layers on the surface of semiconductors increase significantly when the chemical activator undergoes transformations in the reaction zone with the formation of compounds that are active at the instant of formation.