The electronic properties of graphene films are directly affected by the characteristics of the substrates on which they are grown or to which they are transferred. Researchers are taking advantage of this to create graphene p-n junctions by transferring films of the promising electronic material to substrates that have been patterned by compounds that are either strong electron donors or electron acceptors. A low temperature, controllable and stable method has been developed to dope graphene films using self-assembled monolayers (SAM) that modify the interface of graphene and its support substrate. Using this concept, a team of researchers at the Georgia Institute of Technology has created graphene p-n junctions, which are essential to fabricating devices, without damaging the material's lattice structure or reducing electron/hole mobility.
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