High Current, Common-Base GaN/AlGaN Heterojunction Bipolar Transistors

X. A. Cao; G. T. Dang; A. P. Zhang; F. Ren; J. M. Van Hove; J. J. Klaassen; C. J. Polley; A. M. Wowchak; P. P. Chow; D. J. King; C. R. Abernathy; S. J. Pearton

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High Current, Common-Base GaN/AlGaN Heterojunction Bipolar Transistors

机译：大电流共基GaN / AlGaN异质结双极晶体管

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Current densities up to 2.55 kA cm~(-2) at temperatures up to 250 ℃ were obtained in GaN/AlGaN heterojunction bipolar transistors grown by molecular beam epitaxy. At 25 ℃, the power density was 20.4 kW cm~(-2). Room temperature dc current gains of 15-20 were obtained. In the common-base mode of operation, I_C was approximately equal to I_E, indicating high emitter injection efficiency.

机译：在通过分子束外延生长的GaN / AlGaN异质结双极晶体管中，在高达250℃的温度下获得的电流密度高达2.55 kA cm〜（-2）。在25℃时，功率密度为20.4 kW cm〜（-2）。室温下的直流电流增益为15-20。在共基工作模式下，I_C大约等于I_E，表明发射极注入效率很高。

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《Electrochemical and solid-state letters》 |2000年第3期|共3页
作者
X. A. Cao; G. T. Dang; A. P. Zhang; F. Ren; J. M. Van Hove; J. J. Klaassen; C. J. Polley; A. M. Wowchak; P. P. Chow; D. J. King; C. R. Abernathy; S. J. Pearton;
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1. High Current, Common-Base GaN/AlGaN Heterojunction Bipolar Transistors [J] . X. A. Cao, G. T. Dang, A. P. Zhang, Electrochemical and solid-state letters . 2000,第3期

机译：大电流共基GaN / AlGaN异质结双极晶体管
2. Influence of Al/Si Codiffusion on Current Gain Deterioration in AlGaN/GaN Single Heterojunction Bipolar Transistors [J] . Y. T. Tseng, C. W. Lin, W. C. Yang, Electron Devices, IEEE Transactions on . 2016,第11期

机译：Al / Si共扩散对AlGaN / GaN单异质结双极晶体管电流增益劣化的影响
3. High performance pnp AlGaN/GaN heterojunction bipolar transistors on GaN substrates [J] . Kazuhide Kumakura, Toshiki Makimoto Applied Physicsletters . 2008,第15期

机译：GaN衬底上的高性能pnp AlGaN / GaN异质结双极晶体管
4. Current Gain Simulation of Npn AlGaN/GaN Heterojunction Bipolar Transistors [C] . C. Monier, S. J. Pearton, A. G. Baca Materials Research Society Symposium . 2001

机译：NPN AlGaN / GaN异质结双极晶体管的电流增益模拟
5. Design, fabrication and characterization of N-channel InGaAsP-InP based inversion channel technology devices (ICT) for optoelectronic integrated circuits (OEIC): Double heterojunction optoelectronic switches (DOES), heterojunction field-effect transistors (HFET), bipolar inversion channel field-effect transistors (BICFET) and bipolar inversion channel phototransistors (BICPT). [D] . Tan, Eugene. 1998

机译：基于N沟道InGaAsP-InP的倒置通道技术器件（ICT）的设计，制造和表征，用于光电集成电路（OEIC）：双异质结光电开关（DOES），异质结场效应晶体管（HFET），双极倒置沟道场-效应晶体管（BICFET）和双极型反向沟道光电晶体管（BICPT）。
6. The Current Collapse in AlGaN/GaN High-Electron Mobility Transistors Can Originate from the Energy Relaxation of Channel Electrons? [O] . Ling-Feng Mao, Huan-Sheng Ning, Jin-Yan Wang -1

机译：AlGaN / GaN高电子迁移率晶体管中的电流崩塌是否可能源于沟道电子的能量弛豫？
7. Reduced Turn-On Voltage for npn Graded-Base AlGaN/GaN Heterojunction Bipolar Transistors by Thermal Treatment [O] . Shih-Wei Tan, Shih-Wen Lai 2012

机译：通过热处理降低NPN分级基础AlGaN / GaN异质结双极晶体管的开启电压
8. Wideband Transferred-Substrate AlGaN-GaN Heterojunction Bipolar Transistors for Microwave Power Applications [R] . Mishra, U. K. , McCarthy, L. 2001

机译：用于微波功率应用的宽带转移衬底alGaN-GaN异质结双极晶体管

High Current, Common-Base GaN/AlGaN Heterojunction Bipolar Transistors

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