机译:Al / Si共扩散对AlGaN / GaN单异质结双极晶体管电流增益劣化的影响
Institute of Electronics Engineering, National Tsing Hua University, Hsinchu, Taiwan;
Institute of Electronics Engineering, National Tsing Hua University, Hsinchu, Taiwan;
Institute of Electronics Engineering, National Tsing Hua University, Hsinchu, Taiwan;
Institute of Electronics Engineering, National Tsing Hua University, Hsinchu, Taiwan;
Institute of Electronics Engineering, National Tsing Hua University, Hsinchu, Taiwan;
Aluminum gallium nitride; Wide band gap semiconductors; Gallium nitride; Silicon; Heterojunctions; Doping;
机译:具有薄n型GaN基极的pnp AlGaN / GaN异质结双极晶体管的高电流增益的高电压操作
机译:大电流共基GaN / AlGaN异质结双极晶体管
机译:通过有机金属化学气相沉积在蓝宝石和SiC衬底上生长的高电流增益渐变GaN / InGaN异质结双极晶体管
机译:NPN AlGaN / GaN异质结双极晶体管的电流增益模拟
机译:高增益Ingap / GaAs异质结双极晶体管的低压金属化学气相沉积
机译:AlGaN / GaN高电子迁移率晶体管中的电流崩塌是否可能源于沟道电子的能量弛豫?
机译:通过热处理降低NPN分级基础AlGaN / GaN异质结双极晶体管的开启电压