Metal/dielectric liner formation by a simple solution process for through silicon via interconnection

摘要

We investigated the formation of metal and dielectric liners in via holes. We obtained a conformal deposition of the Ag metal and PVPh liners in Si deep via holes. The measured Ag liner thickness increased from 0.18 m to 1.44 μm as the radius of the via hole was increased from 0.85 m to 5 μm. We also obtained a conformal deposition of the PVPh dielectric liner of about 830 nm in thickness in 10 μm deep via holes. The Ag metal and PVPh dielectric liners had uniform thickness on every region of their respective deep via holes.