Circular Pseudo-Metal Oxide Semiconductor Field Effect Transistor in Silicon-on-Insulator Analytical Model, Simulation, and Measurements

摘要

The pseudo-metal oxide semiconductor field effecttransistor (Ψ-MOSFET) is a quick method for detailed electricalcharacterization of bare silicon-on-insulator wafers. A recentvariant consists in using circular Hg probes. A simple analyticalmodel for the geometrical factor, which is of primary importancefor circularΨ-MOSFET applications, is presented and validatedby 3-D numerical simulations. Measurements on a SIMOX waferin both accumulation and inversion are used to test the model.