Amorphous oxide thin film transistors with methyl siloxane based gate dielectric on paper substrate

摘要

Amorphous indium gallium zinc oxide thin film transistors (a-IGZO TFTs) with methyl-siloxane based gate dielectric were fabricated on glossy paper substrate at low processing temperature (≤150°C). Glossy paper planarized by acrylate polymer was introduced as a new low cost flexible substrate and its rms surface roughness of 1 nm was comparable to commercial glass substrate. Compared to low temperature (≤150°C) silicon dioxide dielectric, a-IGZO TFTs using a methyl-siloxane based dielectric on the paper substrate demonstrated excellent performances with field effect mobility of ～20 cm~2 V~(-1) s~(-1), onoff current ratio of ～106, and low leakage current, which show the enormous potential for flexible electronics application.