High-mobility and low-operating voltage organic thin film transistor with epoxy based siloxane binder as the gate dielectric

摘要

This paper reports the fabrication of pentacene-based organic thin-film transistors using a dielectric material, Dynasylan (R) SIVO110. The devices exhibit excellent performance characterized by a low threshold voltage of -1.4V (operating voltage: 0 to -4V) together with a mobility of 1.9 cm(2) V(-1)s(-1). These results are promising because it uses only a single layer of dielectric without performing any intermediate treatment. The reason is attributed to the high charge storage capacity of the dielectric (kappa similar to 20.02), a low interfacial trap density (2.56 x 10(11) cm(-2)), and favorable pentacene film morphology consisting of large and interconnected grains having an average size of 234 nm. (C) 2015 AIP Publishing LLC.