High Etch Rate and Smooth Morphology Using a Novel Chemistry in Reactive Ron Etching of GaN

摘要

Reactive ion etching of GaN metallorganic vapor-phase epitaxy grown on a (0001) sapphire substrate has beeninvestigated using various chemistries based on SiCl4. Theinfluence of gas combinations, gas flow, pressure, and radio-frequency (rf) power on etch rate and morphology was studied.Very high etch rates (160 nm/min) were obtained by adding SF6to SiCl4:Ar. Smooth surfaces and high etch rates (±100nm/min)were achieved at an rf power of 105 W (dc bias of –290 V).