Plasma Enhanced Chemical Vapor Deposition of Manganese on Low-k Dielectrics for Copper Diffusion Barrier Application

摘要

In contrast to Chemical Vapor Deposition (CVD) of Mn from bisethylcyclopentadienyl manganese, Plasma Enhanced Chemical Vapor Deposition (PECVD) does not require moisture within the substrate to enable Mn incorporation. Therefore, such a process can be applied to hydrophobic SiCOH low dielectric constant (k) materials to make copper diffusion barriers for advanced interconnect technologies. Time Dependent Dielectric Breakdown (TDDB) studies showed that a 2 nm PECVD-Mn-based barrier formed on SiCOH dielectric material (k:3.2) is as efficient as a 6 nm industry-standard Physical Vapor Deposited (PVD)-TaN/Ta barrier. Furthermore, such a process has demonstrated conformal deposition in a trench with an aspect ratio of 3.