首页> 外文会议>Symposium on thermal and plasma CVD of nanostructures and their applications;Meeting of the Electrochemical Society >Role of Nano-Porosity in Plasma Enhanced Chemical Vapor Deposition of Hermetic low-k a-SiOCN:H Dielectric Barrier Materials
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Role of Nano-Porosity in Plasma Enhanced Chemical Vapor Deposition of Hermetic low-k a-SiOCN:H Dielectric Barrier Materials

机译:纳米孔隙在密封低k a-SiOCN:H介电阻挡材料的等离子体化学气相沉积中的作用

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Critical thresholds for the diffusion of water through low-k a-SiOCN:H dielectrics were investigated using a combination of x-ray reflectivity (XRR) mass density and positronium annihilation lifetime spectroscopy (PALS) pore size metrologies. It was observed that hermetic low-k a-SiOCN:H dielectrics were achieved only at mass densities > 2.2 g/cm~3 and when the PALS pore size is less than or equivalent to the molecular diameter of water.
机译:通过X射线反射率(XRR)质量密度和正电子threshold没寿命谱(PALS)孔径计量学的组合,研究了水通过低k a-SiOCN:H电介质扩散的临界阈值。观察到,仅当质量密度> 2.2 g / cm〜3且当PALS孔径小于或等于水的分子直径时,才能获得气密的低k a-SiOCN:H电介质。

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