Azobenzene Molecular Effeets on Solution-Processed Y-In-Zn-O Thin-Film Transistors Treated with Light

摘要

A solution-processed yttrium indium zinc oxide (YIZO) channel layer was mixed with azobenzene to generate oxide thin-film transistors (TFTs). Because azobenzene has two different molecular structures, cis- and trans-azobenzene YIZO TFTs were compared. In an electrical analysis, it was found that the structural differences affect the electrical properties. The trans-azobenzene YIZO (TA-YIZO) TFTs produced greater channel densities and lower trap densities than the cis-azobenzene YIZO (CA-YIZO) TFTs. The TA-YIZO TFT exhibited superior characteristics with a mobility of 0.44 cm~2/V s, a threshold voltage (Vth) of 5.01V, a sub-threshold swing of 0.74 V/decade, and an on/off ratio greater than 10~6.