Progress in SiC-4H Epitaxy with Horizontal Hot Wall Reactors

摘要

The latest results on 100 mm 2° off and 150 mm SiC-4H epitaxial process using chlorinated chemistry are illustrated in this paper. On 2° off substrates a reduced step-bunching epi surface with a roughness of <0, 27 nm was achieved and the reduction of SSSF and BSSF was also noticed. SiC 150 mm epitaxy process was demonstrated showing an epi thickness dispersion of ± 0.9% and a doping dispersion of ± 9.1%.