EPITAXY REACTOR WITH WALL PROTECTED AGAINST DEPOSITS

摘要

Epitaxy reactor for treating wafers (1) of semiconductive material by exposing them to a reactive gaseous stream. A wall (8) arranged at a short distance from the wafer or group of wafers which is exposed to the reactive gas is a double wall, with a very narrow space (34) between the two walls, and this space is filled with a mixture whose composition can be regulated and, consequently, whose thermal conductivity can be adjusted. …??The mixture employed is a mixture of hydrogen and argon, the proportion of each in the mixture being adjustable. …??The inner wall (8) of the double wall is a quartz plate, and the outer wall (9) is made of metal. …IMAGE…