...
机译:使用高温热壁反应器的AlN氢化物气相外延
Nitride Solutions Inc., 3333 W. Pawnee St., Wichita, KS 67213, USA;
Nitride Solutions Inc., 3333 W. Pawnee St., Wichita, KS 67213, USA;
Nitride Solutions Inc., 3333 W. Pawnee St., Wichita, KS 67213, USA;
Nitride Solutions Inc., 3333 W. Pawnee St., Wichita, KS 67213, USA;
Nitride Solutions Inc., 3333 W. Pawnee St., Wichita, KS 67213, USA;
A1. High resolution X-ray diffraction; A1. Substrates; A3. Hydride vapor phase epitaxy; B1. Nitrides; B2. Semiconducting aluminum compounds;
机译:高温氢化物气相外延法在c面蓝宝石上外延生长AlN:气相N / Al比和低温保护层的影响
机译:AlN成核层对高温氢化物气相外延法生长AlN薄膜的影响
机译:中间温度缓冲液对氢化物气相外延在AlN模板上GaN生长的影响
机译:AlN中间层对氢化物气相外延生长GaN薄膜的影响
机译:氢化物气相外延生长极性和非极性氮化物半导体准衬底,用于分子束外延开发光电子器件
机译:氢化物气相外延在(0001)AlN上成核并生长(10’11)半极性AlN
机译:高温氢化物气相外延(HT-HVPE)在(0001)AlN模板上生长氮化硼