机译:中间温度缓冲液对氢化物气相外延在AlN模板上GaN生长的影响
Department of Nano-semiconductor Engineering, KMU, Busan 606-791, Republic of Korea;
Center for Interdisciplinary Research, Tohoku University, Sendai, Japan;
Department of Nano-semiconductor Engineering, KMU, Busan 606-791, Republic of Korea;
Center for Interdisciplinary Research, Tohoku University, Sendai, Japan;
Center for Interdisciplinary Research, Tohoku University, Sendai, Japan;
Center for Interdisciplinary Research, Tohoku University, Sendai, Japan;
Center for Interdisciplinary Research, Tohoku University, Sendai, Japan;
Dowa Electronics Materials Co. Ltd., Tokyo, Japan;
Department of Nano-semiconductor Engineering, KMU, Busan 606-791, Republic of Korea;
Division of Electrical and Electronics Engineering, KMU, Busan 606-791, Republic of Korea;
Department of Nano-semiconductor Engineering, KMU, Busan 606-791, Republic of Korea;
Center for Interdisciplinary Research, Tohoku University, Sendai, Japan;
A1. Threading dislocation; A3. Hydride vapor phase epitaxy; A3. Intermediate-temperature buffer layer; B1. Gallium nitride;
机译:氢化物气相外延对沉积在AlN / Si衬底上的低温GaN缓冲层进行预处理
机译:使用和不使用TiN中间层的a面GaN模板上的a面GaN氢化物气相外延
机译:在具有AlN缓冲子层的Si(111)衬底上的氢化物-氯化物系统中通过气相外延生长的GaN薄膜
机译:低温缓冲液生长,改善GaN的氢化物气相外延
机译:用于未来III-氮化物生长的氢化物气相外延生长GaN衬底的表征
机译:氢化物气相外延在(0001)AlN上成核并生长(10’11)半极性AlN
机译:高温氢化物气相外延(HT-HVPE)在(0001)AlN模板上生长氮化硼