机译:使用和不使用TiN中间层的a面GaN模板上的a面GaN氢化物气相外延
Giredmet, 5-1 B. Tolmachevky St., Moscow 119017, Russia;
rnGiredmet, 5-1 B. Tolmachevky St., Moscow 119017, Russia;
rnGiredmet, 5-1 B. Tolmachevky St., Moscow 119017, Russia;
rnGiredmet, 5-1 B. Tolmachevky St., Moscow 119017, Russia;
rnGiredmet, 5-1 B. Tolmachevky St., Moscow 119017, Russia;
rnGiredmet, 5-1 B. Tolmachevky St., Moscow 119017, Russia;
rnGiredmet, 5-1 B. Tolmachevky St., Moscow 119017, Russia;
rnGiredmet, 5-1 B. Tolmachevky St., Moscow 119017, Russia;
rnGiredmet, 5-1 B. Tolmachevky St., Moscow 119017, Russia;
rnGiredmet, 5-1 B. Tolmachevky St., Moscow 119017, Russia;
rnSchool of Advanced Materials Engineering, Chonbuk National University, Jeonju City 561-756, Korea;
rnYale University, New Haven, Connecticut 06520;
rnYale University, New Haven, Connecticut 06520;
rnDepartment of Materials Science Engineering, University of Florida, Gainesville 32611;
机译:金属有机气相外延与氢化物气相外延相结合,在r面蓝宝石上生长a面GaN薄膜
机译:氢化物气相外延在无掩模图案化模板上生长的非极性a面GaN的各向异性缺陷减少
机译:氢化物气相外延对盐酸流对r面蓝宝石上非极性a面GaN层生长的影响
机译:氢化物气相外延生长的平面GaN薄膜脱位和堆垛机构的机制
机译:用于未来III-氮化物生长的氢化物气相外延生长GaN衬底的表征
机译:GaN纳米线的氢化镓气相外延
机译:氢化物气相外延生长的a平面外延侧向生长的GaN基底堆积断层的激子局部化