Regrown Source/Drain Based InGaAs MOSFET with Si3N4 Nitride Spacer

摘要

Regrown source/drain technology is highly appreciated in III-V MOSFET, to reduce the thermal budget induced by otherwise activation annealing required by ion implantation technology, as well as to reduce the source/drain resistances by highly doping the epitaxial materials. While regrown source/drain technology is facing the problems such as high parasitic source/drain capacitances and high electric field at the gate edge toward the drain side, leading to high drain leakage current. To relieve the leakage current problem as well as to improve the high frequency performances, low-k Si3N4 nitride spacer was introduced to the InGaAs-MOSFET. Experimental results showed effective performance enhancements by applying nitride spacer in InGaAs MOSFET including drain leakage current and cutoff frequency. (C) 2016 The Electrochemical Society. All rights reserved.