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Dependence of pad performance on its texture in polishing mono-crystalline silicon wafers

机译:抛光单晶硅晶片时垫性能取决于其纹理

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摘要

Mono-crystalline silicon wafers are important materials in the semiconductor industry for fabricating integrated circuits and micro-electro-mechanical systems. To ensure high surface integrity of polished wafers, the effect of pad texture and its variation on the pad performance needs to be understood. This paper studies experimentally the dependence of pad performance on its texture deterioration by investigating its correlation with polishing time, polishing pressure, and material removal rate. The study concludes that material removal rate decreases as the cylindrical cell structure of a pad is gradually deteriorated, that there is a pad life limit beyond which polishing quality can no longer be maintained, and that the workable pad life can be extended to a certain degree by applying higher polishing pressure.
机译:单晶硅晶片是半导体工业中用于制造集成电路和微机电系统的重要材料。为了确保抛光晶片的高表面完整性,需要了解焊盘纹理及其变化对焊盘性能的影响。本文通过研究其与抛光时间,抛光压力和材料去除率的相关性,通过实验研究了抛光垫性能对其质地劣化的依赖性。研究得出的结论是,随着抛光垫的圆柱形孔结构逐渐劣化,材料去除率会降低,存在抛光垫寿命极限,超过该极限将无法保持抛光质量,并且可延长抛光垫使用寿命到一定程度通过施加更高的抛光压力。

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