Investigation of Ge/Si quantum dot structures using the methods of admittance spectroscopy

摘要

In this paper the properties of multilayer p-i-n-structures based on Si with Ge quantum dots fabricated by molecular beam epitaxy were investigated using the method of admittance spectroscopy at temperatures from 10 K to 300 K. The results of experimental research for two types of structures are presented. The activation energies of the emission process from localised states are calculated.