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首页> 外文期刊>International journal of nanoscience >Effect of Substrate Bias Voltage on the Physical Properties of Zirconium Nitride (ZrN) Films Deposited by Mid Frequency Reactive Magnetron Sputtering
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Effect of Substrate Bias Voltage on the Physical Properties of Zirconium Nitride (ZrN) Films Deposited by Mid Frequency Reactive Magnetron Sputtering

机译:衬底偏置电压对中频反应磁控溅射沉积氮化锆(ZrN)薄膜物理性能的影响

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摘要

Present work involves the preparation of Zirconium Nitride thin films on stainless steel (SS) (304L grade) substrate by reactive cylindrical magnetron sputtering method. The X-ray diffraction (XRD) profile of the ZrN thin films prepared with different bias voltage conforms face centered cubic structure with preferred orientation along the (111) plane at lower bias voltage (100 V) and at higher bias voltage (300 V) the preferred orientation shifted to (220) plane. The influences of bias voltage on the thickness and microhardness ZrN thin films have been studied. ZrN thin film sputtered with 300V bias voltage shows the maximum reflectance of 90% at a wavelength of 1000 nm. The coated substrates have been found to exhibit improved corrosion resistance compared to the SS plate. The root mean square surface roughness and surface morphology were investigated from 3D atomic force microscope (AFM) images and scanning electron microscope (SEM), which indicate smooth and uniform surface pattern without any pin holes.
机译:目前的工作涉及通过反应式圆柱形磁控溅射方法在不锈钢(SS)(304L级)基底上制备氮化锆薄膜。以较低的偏置电压(100 V)和较高的偏置电压(300 V)制备的具有不同偏置电压的ZrN薄膜的X射线衍射(XRD)轮廓符合面心立方结构,并沿着(111)平面具有较好的取向。首选方向移向(220)平面。研究了偏置电压对ZrN薄膜厚度和显微硬度的影响。用300V偏置电压溅射的ZrN薄膜在1000 nm波长下显示90%的最大反射率。已经发现与SS板相比,涂覆的基材表现出改善的耐腐蚀性。从3D原子力显微镜(AFM)图像和扫描电子显微镜(SEM)研究了均方根表面粗糙度和表面形态,这表明没有任何针孔的光滑且均匀的表面图案。

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