TOTAL-DOSE AND SINGLE-EVENT EFFECTS IN SILICON-GERMANIUM HETEROJUNCTION BIPOLAR TRANSISTORS

摘要

We present an over-view of radiation effects in silicon-germanium heteipjunction bipolar transistors (SiGe HBT). We begin by reviewing SiGe HBTs, and then examine the impact of ionizing radiation on both the dc and ac performance of SiGe HBTs, the circuit-level impact of radiation-induced changes in the transistors, followed by single-event phenomena in SiGe HBT circuits, While ionizing radiation degrades both the dc and ac properties of SiGe HBTs, this degradation is remarkably minor, and is far better than that observed in even radiation-hardened conventional Si BIT technologies. This fact is particularly significant given that no intentional radiation hardening is needed to ensure this level of both device-level and circuit-level tolerance (typically multi-Mrad TID). SEU effects are pronounced in SiGe HBT circuits, as expected, but circuit-level mitigation schemes will likely be suitable to ensure adequate tolerance for many orbital missions. SiGe HBT technology thus offers many interesting possibilities for space-borne electronic systems.