Silicon-germanium heterojunction bipolar transistors

摘要

The present utility model relates to an integrated semiconductor microelectronics, namely the construction of bipolar transistors that can be used to create SHF and EHF element base, including as part of BiCMOS integrated circuits. The technical result achieved by changing the design of the silicon-germanium heterojunction bipolar transistor is to raise the cutoff frequency and maximum silicon-germanium heterojunction bipolar transistor (HBT). Of 3-n. f ly-2-yl.