Heavy charged particle detectors based on high-resistivity epitaxial silicon layers

摘要

A technique for manufacturing heavy charged particle detectors based on high-resistance epitaxial silicon layers is described. The special feature of this technique is the design of a rectifying structure based on a Pd{sub}2Si-Si heterojunction. The intrinsic resolution obtained R{sub}(int) = 17 keV for α-particles of 238{sup left}Pu (E{sub}α= 5.49 MeV) demonstrates that it is possible to design heavy charged particle detectors based on epitaxial silicon layers with good spectrometric characteristics.