Investigation of the Internal Amplification Effect on Planar (p{sup}+-n-n{sup}+) Structures Made of High-Resistivity Silicon

摘要

The first results of studies of special strip and pixel silicon detectors are presented. The detector structures allow the creation of high electrical fields (5 ×10{sup}5 V/cm) near p-n junctions that are powerful enough to initiate an avalanche multiplication of charge carriers. The possibility of internal amplification in a semiconductor detector similar to the proportional amplification in gas counters is shown. The spectrum of α particles from 238{sup left}Pu (E{sub}α = 5.5 MeV) demonstrates an "amplified" peak at an energy of 70.2 MeV and an energy resolution FWHM = 10.2 MeV.