PLANAR p-n JUNCTION PROCESS METHOD BASED ON HIGH-RESISTIVITY p-TYPE SILICON

摘要

FIELD: physics; electricity.;SUBSTANCE: method covers planar n⁺-region process with protection of n⁺-p junction periphery surface through nitrogen ion implantation preceded with formation of surface p⁺-type region of preset width on p-type surface directly surrounding n-p interface with using boron doping dosed (0.8-1)·10 cm².;EFFECT: improved performance of high-resistivity silicon devices and reduced reverse current at working voltage.;3 cl, 2 dwg, 3 tbl