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Microstructure and Ferroelectric Properties of BaZr_(0.2)Ti_(0.8)O_3 Films Prepared by Sol-Gel

机译:Sol-Gel制备的BaZr_(0.2)Ti_(0.8)O_3 薄膜的微观结构和铁电性能

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摘要

BaZr_(0.2)Ti_(0.8)O_3 films were prepared using inorganic zirconate and the crystalline microstructure, surface morphology and ferroelectric properties of BZT films were investigated. It is found that the crystal structure of the films belongs to tetragonal phase and is close to cubic phase. The obvious polarization versus electric voltage (P-V) hysteresis loop and butterfly-shaped e-V curves were observed in BaZr_(0.2)Ti_(0.8)O_3 films. The remanent polarization (2P_r) and the coercive field (2E_C) of BaZr _(0.2)Ti_(0.8)O_3 films obtained from the hysteresis loop are 0.1669 mu C/cm~2 and 21.53 kV/cm, respectively. The dielectric constant and tunability of the BaZr _(0.2)Ti_(0.8)O_3 films are 113 and 10.2%, respectively.
机译:利用无机锆酸盐制备了BaZr_(0.2)Ti_(0.8)O_3 薄膜,并研究了BZT薄膜的晶体结构,表面形貌和铁电性能。发现膜的晶体结构属于四方相并且接近立方相。在BaZr_(0.2)Ti_(0.8)O_3 薄膜中观察到了明显的极化相对电压(P-V)磁滞回线和蝴蝶形e-V曲线。 BaZr _(0.2)Ti_(0.8)O_3 薄膜的剩余极化(2P_r)和矫顽场(2E_C)磁滞回线分别为0.1669μC/ cm〜2和21.53 kV / cm。 BaZr _(0.2)Ti_(0.8)O_3 的膜的介电常数和可调性分别为113和10.2%。

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