The Dielectric Properties of Pb_(0.65)Ba_(0.35)ZrO_3 Thin Films Applicable to Microwave Tunable Devices

摘要

Pb_(0.65)Ba_(0.35)ZrO_3 (PBZ) thin films have been grown on MgO (001) substrates by pulsed-laser deposition (PLD). We have compared the structural and dielectric properties of PBZ films grown at various temperatures. A highly c-axis oriented PBZ film has been grown on a MgO (001) substrate at the deposition temperature of 550 deg C and has also shown the largest tunability among all the PBZ films in capacitance-voltage measurements. The tunability and dielectric loss of the PBZ film was 20 percent and 0.00959, respectively. In addition, we have compared the temperature coefficient of capacitance (TCC) of a PBZ film with that of a Ba_(0.5)Sr_(0.5)TiO_3 (BST) film which is a well-known material applicable to tunable microwave devices. We have confirmed that TCC value of a PBZ thin film was three-times smaller than that of a BST thin film.