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Deposition and properties of ferroelectric (lead,strontium) titanium trioxide thin films for room temperature tunable microwave devices.

机译:室温可调微波设备用铁电(铅,锶)三氧化钛薄膜的沉积和性能。

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摘要

Our research implements a new candidate (Pb,Sr)TiO3 (PSTO) for tunable microwave applications at room temperature. PSTO thin films are deposited on different substrates such as LaAlO3 (LAO), NdGaO3 (NGO), and MgO by laser ablation deposition technique. Their structural properties are studied by X-ray diffraction (XRD), Transmission Electron Microscopy (TEM), and Rutherford Backscattering (RBS). The dielectric properties up to 20 GHz are measured by interdigital capacitor (IDC) technique. The results indicate that our PSTO films are highly epitaxially growth with excellent crystallinity. Large dielectric constant, high tunability and low dielectric loss indicate that our PSTO films are very promising for applications in room temperature tunable microwave devices.; Strain effects on the dielectric properties of PSTO films are studied. We observed the anisotropic dielectric properties in PSTO thin films on orthorhombic (110) NGO substrates, which are attributed to the anisotropic mismatch strains.; We found that the structural and dielectric properties of PSTO films are also dependent on the post-annealing methods. Their effects are strongly related to the strains induced by the different cooling processes.
机译:我们的研究为室温下的可调微波应用实现了一种新的(Pb,Sr)TiO3(PSTO)候选物。通过激光烧蚀沉积技术将PSTO薄膜沉积在不同的基材上,例如LaAlO3(LAO),NdGaO3(NGO)和MgO。通过X射线衍射(XRD),透射电子显微镜(TEM)和卢瑟福背散射(RBS)研究了它们的结构特性。通过叉指电容器(IDC)技术可测量高达20 GHz的介电性能。结果表明,我们的PSTO薄膜是高度外延生长的,具有出色的结晶度。大介电常数,高可调性和低介电损耗表明我们的PSTO膜非常适合在室温可调微波设备中应用。研究了应变对PSTO薄膜介电性能的影响。我们观察到正交各向异性(110)NGO衬底上PSTO薄膜的各向异性介电性能,这归因于各向异性失配应变。我们发现PSTO膜的结构和介电性能也取决于后退火方法。它们的作用与不同冷却过程引起的应变密切相关。

著录项

  • 作者

    Liu, Shiwei.;

  • 作者单位

    University of Houston.;

  • 授予单位 University of Houston.;
  • 学科 Physics Condensed Matter.
  • 学位 Ph.D.
  • 年度 2004
  • 页码 121 p.
  • 总页数 121
  • 原文格式 PDF
  • 正文语种 eng
  • 中图分类 O49;
  • 关键词

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