Ferroelectric epitaxial thin film for microwave tunable device and microwave tunable device using the same

摘要

Provided are a ferroelectric epitaxial thin film for a microwave tunable device including a ferroelectric BaTiO₃ seed layer and an epitaxial (Ba_1-xSr_x)TiO₃ thin film, and a microwave tunable device using the same, whereby it is possible to improve the microwave response property of the microwave tunable device, and to enhance the quality of the wireless communication with ultra high speed, low electric power, low cost, and high sensitivity, by using the device of the present invention as an active antenna system, a satellite communication system, or a wireless sensor system,